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Title: Photoinduced Defects in Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering, No 4) by David Redfield, Richard H. Bube ISBN: 0-521-46196-0 Publisher: Cambridge University Press Pub. Date: 01 February, 1996 Format: Hardcover Volumes: 1 List Price(USD): $75.00

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Average Customer Rating: 3 (1 review)

Rating: 3
Summary: The book is a survey of a large number of PI defects
Comment: A large number of photoinduced phenomena associated with the photoinduced (PI) defects creation have been reported in the past. Besides the fundamental interest, these phenomena are practically important due to their influence on the performance and stability of semiconductor devices such as solar cells and laser diodes. The book by Redfield and Bube gives a comprehensive review of the subject. To my opinion the authors review the most important PI defects in crystalline and amorphous semiconductors focusing on the existing models without mathematical complications and emphasizing the need for more sophisticated many electron models.

The authors start with a review of the basic definitions and terminology of metastable defects. Some of the concepts in this chapter were discussed too shortly and it would be much more efficient if more details were given in particular to the audience of new comers to the field and for graduate students. Chapters 2 and 3 deal with defects in crystalline semiconductors with particular attention to DX and EL2 centers in III-V compounds. The bulk of these chapters is devoted mainly to PI defects as observed with electrical properties such as photoconductivity, resistivity and Hall mobility. Photoinduced changes in the optical properties of crystalline semiconductors associated with the defects creation are numerous, but they were ignored in these chapters and the topic is actually missing. A detailed review of the properties of photoinduced defects in hydrogenated amorphous silicon and their kinetics is given in chapters 4 and 5. These two chapters are well organized and informative. In chapter 6, a summary of PI defects in other amorphous semiconductors are summarized. In certain cases such as chalcogenide glasses, this summary is too short when compared to the amount of work done on PI defects in these materials. The last chapter summarizes the effect of PI defects in devices. This chapter is well written and provides a reasonable summary of the main effects, although the book is oriented more to the material aspects than to devices.

In summary the book is a survey of a large number of PI defects in semiconductors. The subject matter is generally well-organized, although many topics were mentioned too briefly and some significant information has been ignored. The amount of references is reasonable, however it is far from being complete and the book has an index. In my opinion the book can be invaluable as an introduction for those who are new to the field and for graduate students.